Abstract
Yttrium aluminum garnet (YAG) layers, doped with some rare-earth ions can be used as thin film solid-state lasers. Thin films of Nd 3+-doped YAG have been grown on undoped YAG substrates by the isothermal liquid phase epitaxy (LPE) dipping technique. The layers have been obtained from a supercooled molten garnet-flux high temperature solution. Y 3− x Nd x Al 5O 12 films (2–30 μm) grown on the (111) plane of YAG substrate have been investigated as a function of neodymium concentration using electron spin resonance (ESR) and X-ray diffraction techniques. According to those measurements it can be concluded that the obtained thin films possess high quality.
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