Abstract
This paper reviews the research work done in the ESPRIT project MORSE concerning investigations of novel precursors for metal-organic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE) and their applications in the growth of optoelectronic device structures. Of the many compounds which have been studied, diethylaluminumhydride-trimethylamine-adduct (DEAlH-TMN), dimethylaminopropyl-dimethyl-indum (DADI), tert-butyl-phosphine (TBP), bisphosphine-ethane (BPE) and tert-butyl-arsine (TBAs) have been found to be the best replacements for conventional precursors. Lasers emitting around 1.55 μm and 980 nm have been grown using alternative group III and group V precursors. They demonstrate that the same, or even better, performance can be obtained with these alternatives.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
