Abstract
This paper reviews the research work done in the ESPRIT project MORSE concerning investigations of novel precursors for metal-organic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE) and their applications in the growth of optoelectronic device structures. Of the many compounds which have been studied, diethylaluminumhydride-trimethylamine-adduct (DEAlH-TMN), dimethylaminopropyl-dimethyl-indum (DADI), tert-butyl-phosphine (TBP), bisphosphine-ethane (BPE) and tert-butyl-arsine (TBAs) have been found to be the best replacements for conventional precursors. Lasers emitting around 1.55 μm and 980 nm have been grown using alternative group III and group V precursors. They demonstrate that the same, or even better, performance can be obtained with these alternatives.
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