Abstract
Two kinds of efficient electrostatic discharge (ESD) protection circuits in lateral drain extended MOSFETs (DEMOSFETs) will be designed and investigated in this paper. One kind of these test samples is fabricated with an SCR structure, which has the lowest turned-on resistance when it is triggered by a high voltage of ESD event. The SCR circuit is the most efficient of all protection devices in terms of ESD performance per unit area. Furthermore, the other type of these DUTs is an SCR with RC-triggered structure, which will have a small trigger voltage (Vt1) under ESD event, and then it obtains a good ESD immunity level.
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