Abstract
To protect semiconductor products against damages due to electrostatic discharges separate protection structures are necessary. These structures are part of the device pad circuitry and designed for a dedicated wafer technology and ESD ( Electrostatic Discharge) withstanding voltage. All present automotive qualification standards AEC-Q100/101 ( Automotive Electronic Council) [1,2] do not cover a qualification and release of ESD protection structures related to their designed ESD strength. The paper will introduce a new qualification strategy for ESD protection structures depending on the designed ESD target. On dedicated ESD diodes drifts of several parameters versus time were analyzed. The results will be presented and discussed. Release targets for automotive applications will be defined.
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