Abstract
The Electrostatic Discharge (ESD) behavior of GaN-on-Si power devices is investigated using on-wafer transmission line pulse (TLP) and very fast transmission line pulse (VFTLP) measurements in different configurations. Under TLP measurement, two failure modes relating to electric field-and power- dependent mechanisms have been identified. Distinct ESD behavior with higher robustness characteristics has been observed under VFTLP measurement for the first time. Independent electric field failure mode with uniform thermal distribution has been recognized for the trigger voltage (V t1 ) and holding voltage (V h ) characteristics under VFTLP measurement.
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