ESD and ion angular distributions of positive and negative chlorine ions from the silicon (1 0 0)/chlorine interface

Abstract

Parameters of electron stimulated desorption of positive and negative chlorine ions at the Si(1 0 0)/Cl interface have been studied with chlorine coverages up to around one monolayer and with electron energies up to 400 eV. Ion angular distributions of Cl − ions show a dominance of emission normal to the surface in contrast to Cl + ion patterns which incorporate off-normal beams. The evidence points to the role of a dipolar dissociation process at defect (missing atom) sites in negative ion formation.