Abstract
The sampling depth of ESCA is about two to three times the mean escape depth of the photoelectrons; thus, in general, a surface layer with a thickness of about 100 Å contributes to the signal. Within this range, information concerning the depth distribution of elements and compounds can be obtained non-destructively. ESCA can therefore be used to reveal the nature of the artefacts that are inevitably formed during the removal of surface layers by ion bombardment. Examples are given of the following effects: selective sputtering (accumulation of Cu on brass, depletion of Cr in the removal of oxide layers on steels), implantation of primary ions and surface atoms, and ion-induced reactions (destruction and formation of compounds). Particular attention is paid to the processes occurring in the bombardment of the oxide-metal interface.
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