Abstract
Characteristics of Esaki-diodes made on plastically bent germanium crystals have been compared with those made on as-grown crystals. Etch pits density on (111) surface of the bent crystals gives the dislocation density of the order of 107/cm2. Two sets of alloyed Esaki-diodes made on (111) faces of bent crystals and as-grown crystals indicate no significant difference between them so far as current ratio Ip/Iv and peak tunneling current density are concerned.
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