Abstract
We demonstrate optical response from a side-injection light-controlled bistable laser diode buried with semi-insulating InP using hydride vapor phase epitaxy. The buried surface around both the 〈110〉 and 〈−110〉 oriented mesas is flat. The bistable operation is obtained by applying control voltage to the saturable absorption region. After optimization of the device parameters, we obtained error-free operation at a bit rate as high as 2.5 Gbit/s.
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