Erratum: Surface depletion region width dependence of threshold voltage shift of ion-implanted MOS transistor

Abstract

Even under the same implantation conditions, e.g., 50‐keV 11B+ ions implanted through 1100‐A gate oxides on 4‐Ω cm silicon substrates, the threshold voltage shift of n ‐channel MOS transistors is ∼55% of the shift of p ‐channel specimens, and deviation from linear dose dependence is observed for the n channel above a dose of 6×1011/cm2, while for a p ‐channel case the threshold voltage shift depends linearly on the net dose in silicon at least up to 1×1012/cm2. These results are discussed and explained with a calculated dose dependence that accounts for the large decrease of the maximum width of the depletion layer with increasing dose for acceptor‐implanted n ‐channel specimens.