Abstract
In transmission electron microscopy (TEM) the quality of the images and the correctness of the results significantly depend on the specimen preparation. By the hand of various selected examples it is shown that the focused ion beammethod (FIB) as a nearly universal preparation technique is suitable for the high accuracy selected area preparation, and because of the relatively large electron transparent areas of uniform thickness, also for the valuation of the layered system quality. Furthermore the limitations of the FIB-method are shown, especially the Ga-implantation and amorphisation caused both by high energy Ga + - ions at the FIB cutting process and by the Pt-(Ga + )-covering onto the sample surface before the FIB cutting process. It is investigated, in what way in the latter case this effect can be avoided by additional metallic barrier layers covering the specimen. Eventually a technique is presented, at which the amorphisation layers formed at the thinning process are removed by low energy ion bombardment in a plasma cleaner.
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