Year-end Sale % OFF 
Abstract
H 2 + ion implantations were performed at 80 KeV and different doses on pure aluminium samples with a 4 MV VDG accelerator. An exact determination of the hydrogen amount implanted is allowed by the use of the elastic recoil detection technique with 2.5 MeV 4He + beam, prior to which the optimization of the ERDA experimental parameters is discussed. Typical application for hydrogen profiling in a-Si:H is presented. The lattice strain variation in implanted AI samples upon the hydrogen concentration is determined using transmission electron microscopy together with the ERDA technique.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
