Abstract
A rare-earth ion, namely erbium, was doped into silicon (Si) using thermal indiffusion. Codoping using ytterbium oxide (Yb2O3) and germanium (Ge) to increase photoluminescence (PL) intensity was also demonstrated, and the effect of different Yb/Er ratios on Si was studied. Room temperature PL intensity relative to Er-diffused sample was found to increase by ∼30 times using Yb/Er (27/1) codopant. When a SiGe/Yb/Er layer was used, room temperature PL intensity was further increased to more than 60 times.
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