Abstract
In this article, we describe and electro-chemical method for fabricating erbium-doped silicon-rich oxide (SRO) waveguides. The porosity, the Er-ion concentration and the refractive index can be controlled by varying the current density (continuous or pulsed currents) during the production process. The refractive index di erence between the core and the cladding layers and the pro le of the SRO waveguides were tested by using an m-line spectrometer and Field-emission scanning electron microscope (FE-SEM). The photo-luminescent (PL) emission of Er-ions at 1550 nm in the SRO waveguides could be obtained even when the excitation wavelength was away from the resonance absorption band of the Er-ions. This result revealed that Er-ions are possibly excited from the ground state I15=2 to the rst excited state I13=2 by energy transfer from excited Si nanocrystallites. The Er-doped SRO waveguides can be applied to optoelectronic devices compatible with Si-based integrated circuit technology.
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