Abstract
The properties of Er3+-doped gallium lanthanum sulphide thin films prepared on a silicon substrate by femtosecond pulsed laser deposition were studied as a function of process temperature. The films were characterised using transition electron microscopy imaging, X-ray diffractometry, Raman spectroscopy, fluorescence spectroscopy, and UV–Vis–NIR spectroscopy. The results show that by increasing the substrate temperature, the deposited layer thickness increases and the crystallinity of the films changes. The room temperature photoluminescence and lifetimes of the 4I13/2→4I15/2 transition of Er3+ are reported in the paper.
Highlights
Chalcogenide glasses consist of chalcogen elements such as sulphur, selenium, and tellurium from the Group VI of the periodic table, and mixed with other additive elements such as germanium (Ge), arsenic (As), antimony (Sb), and gallium (Ga) [1, 2]
When incorporated with rare earth ions such as ytterbium (Yb), erbium (Er), neodymium (Nd), thulium (Tm), praseodymium (Pr), and holmium (Ho), they offer additional applications in long-wavelength light-emitting and amplification devices [2,3,4]. An extension of these materials study into the MIR wavelength would be suitable for active optical devices (e.g. IR fibre-optic amplifiers operating in the 2–10 μm range) and a wide range of spectroscopy and sensing of applications [7,8,9]
E r3+-doped Ga–La–S glass thin films were successfully deposited on the pure silicon substrate at various temperatures by using the fs-pulsed laser deposition (PLD) technique
Summary
Chalcogenide glasses consist of chalcogen elements such as sulphur, selenium, and tellurium from the Group VI of the periodic table, and mixed with other additive elements such as germanium (Ge), arsenic (As), antimony (Sb), and gallium (Ga) [1, 2]. An extension of these materials study into the MIR wavelength would be suitable for active optical devices (e.g. IR fibre-optic amplifiers operating in the 2–10 μm range) and a wide range of spectroscopy (e.g. diffuse reflectance and absorption) and sensing (e.g. fibre-optic chemical sensor systems) of applications [7,8,9]. These applications benefit integration of chalcogenide glass-based active and passive components into a single substrate, which would eventually reduce the device footprint and cost [10]. The laser action of Nd-doped Ga–La–S glass pulled into fibres with core/clad structures has been demonstrated by Schweizer et al [15]
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