Erbium-defect interactions in silica films implanted with MeV Er ions

Abstract

ABSTRACTThe effect of ion implantation damage on energy transfer processes in Er-doped silica films prepared by MeV ion implantation is studied, using measurements of the luminescence decay of Er3+(4ƒ11) at 1.535 μm. Silica films implanted with Er and annealed at 900°C show a luminescence lifetime of 14.1 ms. Subsequent irradiation with MeV C, Si, or Ge ions at fluences as low as 1011 ions/cm2 decreases the lifetime, which eventually saturates at 6.6–7.8 ms for fluences larger than 1014 ions/cm2. The fluence required to saturate and the lifetime at saturation depend on the ion used. These results are interpreted in terms of non-radiative energy transfer processes caused by irradiation-induced defects in the silica. The ion damage effects are mainly caused by the electronic component of the energy loss along the ion trajectories.