Abstract
To discuss the applicability of a MOSFET with Si-implanted gate-SiO/sub 2/ of 50 nm thickness to a non volatile random access memory (NVRAM) operating more than 3.3/spl times/10/sup 15/ erase/write (E/W) cycles, E/W-cycle tests were performed up to 10/sup 11/ cycles by measuring the hysteresis curve observed in a source follower MOSFET in which a sine-wave voltage of 100 kHz was supplied to the gate. Degradations in the threshold-voltage window of 15 V and gain factor were scarcely observed in a MOSFET with Si-implantation at 50 keV/1/spl times/10/sup 16/ cm/sup -2/ at a gate voltage of /spl plusmn/40 V. Those degradations observed in a MOSFET with 25 keV/3/spl times/10/sup 16/ cm/sup -2/ were improved by lowering the gate voltage from /spl plusmn/40 V to /spl plusmn/30 V in sacrificing the smaller threshold-voltage window from 20 to 8.5 V.
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