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Abstract
AbstractFocusing on compound semiconductor triple‐barrier (or coupled‐quantum well) resonant tunneling diodes (TBRTD), equivalent circuit topology and elements are expressed in terms of negative quantum inductance (LQ) and quantum capacitance (CQ) as well as negative differential conductance G. The circuit model is theoretically derived on the basis of rate equation approach and validity of the model was experimentally confirmed by impedance measurement up to 30 GHz and nonlinear bias‐voltage‐dependent. LQ and CQ were evaluated with electron quasi‐lifetime and escape time as tentative fitting parameters in the particular In0.52Al0.48As/In0.53Ga0.47As TBRTD grown by MBE. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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