Abstract
Equivalent circuit models have been developed to study the performance of the devices with two-dimensional electron gas (2DEG) system for terahertz (THz) applications (single- and grid-grating-gated high-electron-mobility transistor (HEMT)) and for sensing (micromachined HEMT with the array of resonant floating gates). The components of the equivalent circuits were related to physical and geometrical parameters of the devices under consideration. The developed equivalent circuits were used to simulate frequency performance of the devices under consideration invoking IsSpice circuit simulator.
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