Abstract
In this work, a general equivalent circuit model based on the carrier reservoir splitting approach in high-performance multi-mode vertical-cavity surface-emitting lasers (VCSELs) is presented. This model accurately describes the intrinsic dynamic behavior of these VCSELs for the case where the lasing modes do not share a common carrier reservoir. Moreover, this circuit model is derived from advanced multi-mode rate equations that take into account the effect of spatial hole-burning, gain compression, and inhomogeneity in the carrier distribution between the lasing mode ensembles. The validity of the model is confirmed through simulation of the intrinsic modulation response of these lasers.
Highlights
Vertical-cavity surface-emitting lasers (VCSELs) offer an excellent solution for many high-speed data communication challenges
Despite the intensive research conducted to understand the underlying physics behind the multi-mode (MM) behavior in oxide-confined MM VCSELs and their impact on the intrinsic laser dynamics, many ambiguities still exist concerning the nature of the abnormal multi-peak phenomenon and the notches occurring in the small-signal modulation response of these VCSELs
This rate equation-based model enables the extraction of reliable information from the intrinsic dynamics of high-speed MM VCSELs, as it takes into account the effect of spatial hole-burning (SHB), gain compression, and inhomogeneity in the carrier distribution between the modes
Summary
Vertical-cavity surface-emitting lasers (VCSELs) offer an excellent solution for many high-speed data communication challenges. An advanced and accurate MM small-signal model, which is based on the carrier reservoir splitting approach, was developed [3,4] This rate equation-based model enables the extraction of reliable information from the intrinsic dynamics of high-speed MM VCSELs, as it takes into account the effect of spatial hole-burning (SHB), gain compression, and inhomogeneity in the carrier distribution between the modes. Using these MM rate equations ensures deeper understanding of the device.
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