Abstract
This work presents the analysis of electrical parameter drain current of gallium nitride (GaN) based high electron mobility transistor (HEMT) with field plate. The analysis has been done by using the technology computer-aided design (TCAD) simulation software on the basis of temperature profile. Channel temperature is used as the main parameter because this is responsible for degradation of electrical performance of the device. GaN HEMT of gate length 0.25 μm with field plate has been used for simulations. Equivalent channel temperature has been studied for this device which is more relevant in the study of thermal analysis.
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