Abstract
Borosilicate, BxSiOz (BSG), and borophosphosilicate, BxPySiOz (BPSG) glasses, for applications as intermetal dielectrics in VLSI technology were deposited by plasma enhanced chemical vapor deposition on silicon substrates. Quantitative infrared spectroscopy (IR), Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA) and X-ray energy dispersion (EDX) were used to obtain the composition of the films. After annealing at temperatures in the range 200 to 900°C under a nitrogen ambient, the concentration of phosphorus and boron in the deposited films is analyzed. It is found that the phosphorus concentration is independent of the annealing temperature. However, the boron concentration decreases with the annealing temperature in both types of glasses. This effect can be attributed to the influence of the concentration of the P-O bonds in the phosphorus doped films, and also to the morphology and hygroscopicity of the films.
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