Equipment and method for ion beam control in implantation and science experiments

Abstract

An experimental method has been developed and electronic equipment has been created both for the experimental research of the small-angle (less than 10 −3 rad) scattering of ions with the energy of MeV range on thin gaseous or single-crystal targets and for industrial applications in doping of materials by ion implantation. A discrete deflection of the slimly collimated ion beam within some angle range is implemented with electrostatic field of a deflector. The electronic equipment generates a stepwise potential difference between the deflector plates with the frequency of a few kHz and forms a numerical code, corresponding to the deflection angle value. Due to the periodic deflection the ion beam scans the surface of the material to be doped and forms the required dope pattern. In the case of experimental research the beam scattered in a target scans a collimated detector. Deflection angle codes are recorded at the moment of ion detection and accumulated as a spectrum of the angular distribution of the scattered ions. Depending on the task the equipment complex makes a number of operating modes available. A digital–analog forming of potentials on the deflector and representation of the deflection angle as a numerical code enables the microprocessor devices and computers to be effectively applied for forming and measuring an ion beam profile.