Abstract
The Pd-Si system was examined in the 13 to 25 at. pct silicon range by X-ray diffraction, thermal analysis, and metallography. The existence of the compounds Pd5Si, Pd9Si2, and Pd3Si was confirmed. The three compounds form peritectically. Pd5Si is monoclinic, while Pd9Si2 and Pd3Si are orthorhombic. These compounds form defect structures having low symmetry and large unit cells. Electron concentrations per unit cell govern compound formation. However, there was no evidence of the existence of either Pd4Si or Pd9Si4.
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