Abstract
(111) silicon has been implanted with 6 MeV 68 Ni ions at various temperatures in a dose range from 5 × 10 12 to 2 × 10 17 Ni cm 2 . Quantitative depth resolved optical studies on the radiation damage are compared with EPR and XRD measurements, giving direct information on existing defect species and changes of the lattice period, respectively. Results of EPR investigations support the interpretation of the dose and temperature dependence of the optically detected damage given by Lindner and te Kaat [J. Mater. Res. 3 (1988) 1238], who base themselves on the damage model of Hecking et al. [Nucl. Instr. and Meth. B 15 (1986) 760]. EPR lines of five different point defect (Si-A4, Si-P1, Si-A6, Si-B2, Si-P3) and of amorphous material are observed. The use of different experimental methods allows for a comparison of the individual sensitivities for several kinds of damage.
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