Abstract
High-valence osmium ions (Os 5+ or Os 7+) were stabilized on CeO 2 and ThO 2, when the initially impregnated cluster Os 3(CO) 12 was decomposed under oxidizing conditions. This is in contrast to the formation of low-valence ions (Os 1+ and Os 3+) on Al 2O 3. The presence of osmium on CeO 2 and ThO 2 presumably modified their redox properties and created new centers for O 2 − radical anion localization.
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