Abstract
Nanocrystalline silicon carbide (3C-SiC) has been irradiated by neutrons (2× 1013n ⋅ cm−2s−1) up to 20 hours. Paramagnetic centers and their nature have been investigated comparatively before and after neutron irradiation. The Electron Paramagnetic Resonance (EPR) measurements were performed over the broad range of magnetic field from 0.05 to 0.55 T (500 to 5500 Gauss) in order to detect different paramagnetic centers. Simultaneously, EPR spectroscopy performed over the range from 0.3270T to 0.3370T which is most paramagnetic centers appears including free radicals. Neutron irradiation effects on the concentration of $V_{Si}^{-}$ and $V_{C}^{+}$ vacancies has been investigated. The number of paramagnetic centers for different values of g-factor has been calculated appropriate to local cases existed around 3300G. After neutron irradiation creation mechanism of paramagnetic centers in the nanocrystalline silicon carbide has investigated.
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