EPR Parameters and Local Atom-position Parameters for Co2+ Ions in CdS and CdSe Semiconductors

Abstract

The EPR parameters (zero-field splitting D and g factors gII, g⊥) of Co2+ ions in CdS and CdSe semiconductors are calculated from the high-order perturbation formulas based on the cluster approach for a 3d7 ion in trigonal symmetry. These formulas include the contribution to the EPR parameters from both the spin-orbit coupling parameter of the 3d7 ion and that of the ligand. From the calculations, the local atom-position parameters u (which are different from the corresponding values in the host crystals) for the Co2+ impurity centers in both semiconductors are estimated. The results are discussed