Abstract
Abstract Effects of electron bombardment on Phosphorus-doped N-type Germanium (Ge) were studied by EPR techniques in the hope of detecting the presence of interstitial Phosphorus (PI) which were ejected from the original substitutional sites through the interaction with the mobile interstitial Ge atoms produced by the bombardment. Bombardment induced the following two remarkable effects: (1) Extreme broadening of EPR linewidth of the normal substitutional Phosphorus (PS) donors which indicated that the bombardment produced large internal strains (∼10−3) at the sites of PS; (2) Occurrence of new EPR line and study of its g-value showed that the corresponding impurities (i) had symmetric wave function with the [001] axis and (ii) were located in the field of stronger internal strain (∼10−2) than that at PS. A model of PI displaced into ⟨001⟩ directions from ordinary interstitial sites with tetrahedral symmetry due to Jahn-Teller effect was proposed to explain these effects.
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