Abstract
A new epoxy-based azo polymer (BP-AZ-CSMB), which contained chiral-substituted push-pull azo chromophores, was synthesized by the post-polymerization azo-coupling reaction. This newly synthesized polymer was characterized by 1H NMR, FTIR, GPC, UV-Vis, DSC and TGA. When exposed to interference patterns of laser beam (532 nm, 100 mW cm−2), BP-AZ-CSMB showed ability to quickly form surface-relief-gratings. Due to this property, quasi-crystal surface relief structures were feasibly fabricated on the BP-AZ-CSMB films by using the dual-beam multiple exposure technique. The quasi-crystal structures with 6-, 8-, 10-, 12-, 36-, and 72-fold rotation symmetry were successfully photofabricated.
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