Abstract
ABSTRACTArF excimer laser CVD was performed in a very-low pressure reactor. C2H2 and Si2H6 were used as source gases and carrier gases were not used. Epitaxial 3C-type SiC(111) grew parallel to α-Al2O3 (0001) substrate. It had a twin structure. Mismatch between the lattice parameters was estimated to be 12%. The epitaxial growth occurred down to 980°C and the films about 0.5μm in thickness grew at 1150°C for 30 minutes. Unirradiated films were polycrystalline or spontaneously peeling-off epitaxial films, while irradiated ones were strongly adherent epitaxial films.
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