Abstract
A new method of synthesis of semipolar gallium nitride on a silicon substrate using the technology of solid-phase epitaxy of 3C-SiC nanocrystals has been suggested. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables one to form epitaxial layers of semipolar gallium nitride with layer deviation from the polar position of the c axis of a wurtzite crystal by an angle of 48°–51° at the minimal half-width of the X-ray diffraction rocking curve (ωθ) ∼ 24′. The observed bend of a cylindrical character in the structure of GaN/AlN/3C-SiC(001) is explained by the anisotropic deformation of semipolar GaN on silicon.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
