Abstract
Stacking structures show great potential for the modulation of physical properties of two-dimensional materials. However, most studies have focused on bilayer (BL) stacking MoS2 with same morphology. Here, we report a simple but effective process for manufacturing multilayer stacking MoS2 crystal microstructures. The epitaxial growth mechanism is investigated by studying a typical trilayer (TL) stacking MoS2 with different shapes. Raman and photoluminescence (PL) mapping exhibit high homogeneity and obvious boundary contrast between the different structures. The TL-MoS2 microstructure field-effect transistor (FET) shows high carrier mobility and on/off ratio, which is related to stacking configuration. It is note that type I junction can form between the different structures and the obvious photocurrent observed are in the junction region. The 15.3° twisted BL-AB stacking MoS2 Moiré superlattices with a period of 1.39 ± 0.05 nm. This work provides a reference for the development and application of multilayer-stacking MoS2.
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