Abstract
Modern epitaxial growth techniques show that material-phase stabilization can be achieved by epitaxial growth provided that suitable substrate (s) are used. Buffer layers (BL) play a vital role in epitaxial growth optimisation. By applying through the BL/s heterostructure continuity conditions on relevant strain-related features, we perform a self-consistent growth-optimisation strategy involving BL compositions. The calculation of these strain-related phase-dependent features enables to achieve an approach of as-grown material phase determination based on epitaxy experiments and theoretical previsions. To illustrate this methodology, we have investigated the lead salt IV–VI PbSe/CaF2/Si(111) epilayer grown by MBE. For the optimised BL, a thin CaFSe layer has been grown under Se flux of CaF2 layer before deposition of the PbSe layer. The efficiency of the continuity conditions in optimising MBE growth is shown by characterising all samples by high-resolution X-ray diffraction, atomic force microscopy for structural quality and Hall effect for electrical properties.
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