Abstract
We demonstrate metal organic vapour phase epitaxy growth ofGaP/GaAs1−xPx/GaP double heterostructure nanowires on GaP(111)B, and reportbright photoluminescence at room temperature. By using differentPH3 toAsH3 flow ratios duringgrowth of the GaAs1−xPx segment, we are able to control the composition of the segment, making it feasible to tunethe wavelength of the emitted light. A photoluminescence system was employed tocharacterize the luminescence, and x-ray energy dispersive spectrometry and x-raydiffraction studies were used to investigate the composition of the segment. Thesedouble heterostructure nanowires could in the future be used in optoelectronicdevices and as multiple-wavelength fluorescent markers for biomedical applications.
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