Epitaxial ZrC thin films grown by pulsed laser deposition

Abstract

ZrC thin films were grown on (0 0 1)Si, (1 1 1)Si and (0 0 0 1)sapphire substrates by the pulsed laser deposition (PLD) technique. X-ray diffraction, X-ray reflectivity and Auger electron spectroscopy investigations were used to characterize the structure and composition of the deposited films. It has been found that films grown at temperatures higher than 700 °C under very low water vapor pressures were highly textured. Films deposited on (0 0 1)Si grew with the (0 0 1) axis perpendicular to the substrate, while those deposited on (1 1 1)Si and (0 0 0 1)sapphire grew with the (1 1 1) axis perpendicular to the substrate. Pole figures investigations showed that films were epitaxial, with in-plane axis aligned to those of the substrate.