Abstract
A low-temperature modification of the Chemical vapor deposition (CVD) growth with the RF-discharge plasma generated in CVD reactor during the growth process has been reported. This method allows us to significantly increase the effective pressure of atomic oxygen during the deposition, and to shift the stoichiometry of the growing film to oxygen excess. With RF activation we could lower the substrate temperature by more than 200°C, down to 420°C. The obtained zinc oxide/ α-sapphire films feature high crystallinity, perfect surface morphology and good electrical and optical properties at the expense of both the decrease in the width of the transition layer and amount of the uncontrolled impurities.
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