Abstract
In this letter, we report integration of magnetic and ultrafast-transition properties of VO2 films with antiferromagnetic (AFM) Cr2O3 template layer in the epitaxial VO2/Cr2O3/Al2O3 heterostructure The Cr2O3 is an AFM material, which can pin the spin momentum of ferromagnetic VO2, in addition to providing epitaxial template. Thus, the magnetic properties of VO2 films grown with Cr2O3 buffer layer can be improved for multifunctional magnetic tunnel junctions and sensor applications. Electrical resistivity measurements as a function of temperature showed a sharp transition width (1.94 °C), with a small hysteresis width (5.7 °C), and large resistance change (∼3.8×104) across the semiconductor to metal transition (SMT). We discuss the correlations of the magnetic properties and SMT characteristics with epitaxial growth and formation of twins.
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