Epitaxial VN(001) Grown and Analyzed In situ by AES After (1) Deposition and (2) Ar+ Sputter Etching

Abstract

In situ Auger electron spectroscopy (AES) spectra were obtained on single-crystal VN(001) layers grown on MgO(001)1 × 1 in a multichamber ultrahigh vacuum (UHV) system. A turbomolecular-pumped magnetron sputter deposition chamber was attached to a Physical Electronics model 660 scanning Auger system to allow spectra to be collected on the as-deposited film without exposure to air. The spectra show that the film surfaces are free of O and C. Spectra are also presented following sputter etching with a 3 keV Ar+ beam at an incident current density of 0.3 mA cm−2. The film was sputtered until the N/V peak height ratio reached equilibrium, then spectra were acquired for the after sputter condition. AES spectra were collected for both the as-deposited and Ar+ sputter etched films using primary beam energies of 3, 5, 10, and 20 keV. The as-deposited bulk film composition was analyzed by Rutherford backscattering spectroscopy (RBS) and found to be stoichiometric with a N/V ratio of 1.04 ± 0.02.