Abstract
TiN has been synthesized by plasma nitridation of single crystalline rutile (TiO2). Nitridation of single crystalline rutile (0 0 1) was performed with microwave plasma of N2 gas. The chemical evidence for TiN formation was determined by x-ray photoelectron spectroscopy and x-ray energy-dispersive spectroscopy with scanning transmission electron microscopy (STEM). Structural characterization from x-ray diffraction patterns and STEM high angle annular dark field images in Z-contrast reveals that TiN consisting of orthogonal domain structure epitaxially forms on rutile substrate. From the orientation relationship, it is understood that nitridation of rutile may proceed along [110]TiO2 to form (1 1 0)-oriented TiN.
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