Abstract
Growth of epitaxial GaAs thin film on flexible, inexpensive substrates can open up the possibility of fabricating affordable and high efficiency III-V photovoltaics which may lead to a complete transformation of the PV market. Here we report the successful hetero-epitaxial growth of GaAs thin film by metal organic chemical vapor deposition on single-crystallinelike Ge thin film on flexible metal foils. GaAs epilayers showed (00l) orientation with zinc blende structure and good optoelectronic quality with minimal thermoelastic/lattice mismatch strain. High doping density due to Ge diffusion from the substrate was observed in the GaAs film with a Hall mobility of 285 cm2/V-s. XPS depth profiles showed significant diffusion of Ge in GaAs thin film.
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