Abstract
A novel method for producing high-quality polycrystalline silicon (poly-Si) films on glass by means of solid phase epitaxy (SPE) of evaporated amorphous silicon on aluminium-induced crystallisation (AIC) poly-Si seed layers is introduced. Optical transmission microscope, Raman, UV reflectance spectroscopy and cross-sectional transmission electron microscope measurements show consistently that a transfer of the crystal properties of the AIC poly-Si seed layer into the crystallised amorphous silicon layer has been achieved. A 1-sun open-circuit voltage of 337 mV is realised with a hydrogenated SPE/AIC p–n junction device, which is a promising result considering the early stage of process development. The SPE/AIC method appears well suited for the fabrication of poly-Si thin-film solar cells on glass and, due to the high crystal quality and the much larger average grain size, could lead to improved energy conversion efficiencies compared to Si solar cells made by solid phase crystallisation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
