Abstract

Epitaxial superconducting δ-MoN and δ-NbN thin films, exhibiting a superconducting transition temperature (Tconset) of 13 K and 10.3 K, respectively, were prepared by a simple chemical solution deposition on c-cut Al2O3 substrates. A sharp transition and the large residual resistivity ratio (RRR) ρ300K/ρonset of δ-MoN and δ-NbN thin films suggest high quality of the prepared epitaxial thin films. The critical current density (Jc) under 100 Oe at 5 K is of 1.37 and 0.74 MA/cm2 for the δ-MoN and δ-NbN thin films, respectively. The results will provide a facile route to prepare epitaxial superconducting metal nitride thin films.

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