Abstract
Epitaxial superconducting δ-MoN and δ-NbN thin films, exhibiting a superconducting transition temperature (Tconset) of 13 K and 10.3 K, respectively, were prepared by a simple chemical solution deposition on c-cut Al2O3 substrates. A sharp transition and the large residual resistivity ratio (RRR) ρ300K/ρonset of δ-MoN and δ-NbN thin films suggest high quality of the prepared epitaxial thin films. The critical current density (Jc) under 100 Oe at 5 K is of 1.37 and 0.74 MA/cm2 for the δ-MoN and δ-NbN thin films, respectively. The results will provide a facile route to prepare epitaxial superconducting metal nitride thin films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
