Abstract
Effect of growth orientation on charge- and orbital-ordering (CO-OO) phenomena has been studied for Pr0.5Ca0.5MnO3 epitaxial thin films fabricated on (LaAlO3)0.3–(SrAl0.5Ta0.5O3)0.7 (LSAT) substrates by means of resistivity, synchrotron x-ray diffraction, and polarized optical microscopy measurements. CO-OO transition is observed around 220 K for a film grown on an LSAT (011) substrate [(011) film], similarly to a bulk sample, while a film grown on a (001) plane of LSAT [(001) film] shows much higher transition temperature around 300 K. The domain size of OO is approximately three times as large in the (011) film as in the (001) film. These results demonstrate that various properties of CO-OO phenomena can be controlled with the growth orientation via the epitaxial strain from the substrate.
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