Epitaxial silicon deposition at 300 °C with remote plasma processing using SiH4/H2 mixtures

Abstract

Epitaxial Si films have been deposited on Si(100) at 300 °C by remote plasma-enhanced chemical vapor deposition using SiH4/H2 mixtures with deposition rates as high as 25 Å/min at these low temperatures. Hall measurements of the film show an unintentional doping level of about 1×1017 cm−3 with electron mobilities of 700 cm2 V−1s−1. Critical to the process is the in situ cleaning of the silicon substrate surface prior to deposition.