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Abstract
The radiation detection properties of Schottky detectors made on epitaxial layers of 4H silicon carbide were evaluated. Exposure to 5.48 MeV alpha particles from a 241 Am source in vacuum led to robust signals from the detectors. The collection of the charge carriers was found to increase linearly with the square root of the applied reverse bias.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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