Abstract
Fabrication of epitaxial Si/SiO 2 low dimensional structures using in situ multiple low energy oxygen implantation in combination with Si molecular beam epitaxy is described, highlighting its potential for the control of quantum confinement structures. Highly-oriented Si nanodots and Si quantum wires embedded in SiO 2 are demonstrated as prominent examples and the formation mechanism of the epitaxial Si/SiO 2 bilayer is described. Successful growth of epi-ready Si/SiO 2 Bragg reflector is demonstrated in view of optoelectronic application.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.