Abstract
Solid phase epitaxial regrowth of the amorphized layer in α-quartz induced by Rb ion implantations has been studied by thermal annealing in air at 800–1200 K. The Rb + ions were implanted at 175 keV to fluences of 1.0×10 16–3.4×10 16 ions/cm 2. The damage profiles and Rb depth distributions were measured by Rutherford backscattering and channeling spectroscopy. Complete epitaxial recrystallization was achieved for the samples implanted with 2.5×10 16 Rb/cm 2 after a 1 h annealing in air at 1173 K. The regrowth process occurs in two steps and has activation energies of E a L=0.6±0.1 and E a H=3.6±0.4 eV. The recrystallization rate was found to increase for increasing implanted Rb fluence. The results are discussed by considering the topological structures and network connectivity of SiO 2.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
