Abstract
Using injection, powder-flash and band-flash MOCVD techniques, epitaxial thin films of Nd, Ho, Y, Tm, Dy and Lu manganites were prepared. The formation of high-pressure phase NdMn 7O 12 as a thin surface layer on Pnma Nd 1− x MnO 3+δ ( x∼0.15) in an Nd-deficient system and HoMnO 3, YMnO 3, TmMnO 3 and LuMnO 3 as perovskite phases (known in the bulk only as high-pressure phases) on a LaAlO 3 substrate were observed. The remarkable reduction in the pressure needed for formation of the phases in epitaxial films in comparison with bulk samples is a manifestation of the epitaxial stabilisation discussed in the paper. The details of the crystal and domain structure of the films as observed by X-ray diffraction (XRD), selected-area electron diffraction (SAED) and high-resolution electron microscopy (HREM) techniques are described.
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