Abstract
Epitaxial Mg2Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111)∥Mg2Si(110) and Si⟨11¯0⟩∥Mg2Si⟨11¯0⟩ has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg2Si film in a MgO∕Mg2Si∕Si double heterostructure.
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